savantic semiconductor product specification silicon npn power transistors 2sD2058 d escription with to-220f package complement to type 2sb1366 low collector saturation voltage: v ce(sat) =1.0v(max) at i c =2a,i b =0.2a collector power dissipation: p c =25w(t c =25 ) applications with general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i b base current 0.5 a t a =25 1.5 p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol www.datasheet.in
savantic semiconductor product specification 2 silicon npn power transistors 2sD2058 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 60 v v cesat collector-emitter saturation voltage i c =2a ;i b =0.2a 1.5 v v be base-emitter on voltage i c =0.5a;v ce =5v 3.0 v i cbo collector cut-off current v cb =60v;i e =0 10 a i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe dc current gain i c =0.5a ; v ce =5v 60 f t transition frequency i c =0.5a ; v ce =5v 3.0 mhz c ob collector output capacitance f=1mhz;v cb =10v 35 pf switching times t on turn-on time 0.65 s t s storage time 1.30 s t f fall time i c =2.0a; i b1 =-i b2 =0.2a v cc =30v ,r l =15 a 0.65 s h fe classifications o y g 60-120 100-200 150-300 www.datasheet.in
savantic semiconductor product specification 3 silicon npn power transistors 2sD2058 package outline fig.2 outline dimensions www.datasheet.in
savantic semiconductor product specification 4 silicon npn power transistors 2sD2058 www.datasheet.in
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